| PART |
Description |
Maker |
| STE70IE120 |
Monolithic Emitter Switched Bipolar Transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT 1200V 70A 0.014Ohm Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| STP08IE120F4 P08IE120F4 |
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| STC08IE120HV C08IE120HV |
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| STC08IE120HP C08IE120HP |
Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm 发射极开关双极晶体管内酰胺酶1200 8A 0.10欧姆
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IDP30E65D2 |
Emitter Controlled Diode
|
Infineon Technologies A...
|
| IRKU162-12 |
Silicon Controlled Rectifier, 355 A, 1200 V, SCR
|
Vishay Semiconductors
|
| SIDC06D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
| FF300R17KE4 |
62mm C-Series module with trench/Fieldstopp IGBT4 and Emitter Controlled Diode
|
Infineon Technologies AG
|
| FB10R06W1E3 |
EasyPIM module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC
|
Infineon Technologies AG
|
